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Band-Structure Engineering in Strained Semiconductor Lasers

    Eoin P. O’Reilly and Alfred R. Adams, Member, IEEE

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    Abstract-The influence of both compressive and tensile strain
    on semiconductor lasers and optical amplifiers is reevaluated
    in the light of recent experimental and theoretical work. Strain
    reduces the three-dimensional symmetry of the lattice and helps
    match the wave functions of the holes to the one-dimensional
    symmetry of the laser beam. It can also decrease the density of
    states at the valence band maximum and so reduce the carrier
    density required to reach threshold. These two effects appear
    to adequately explain the TE and TM gain in compressive and
    tensile structures, including polarization-independent amplifiers,
    the behavior of visible lasers and the improved frequency characteristics
    of InGaAdGaAs lasers. In 1.5 pm InGaAsP/InP lasers
    phonon-assisted Auger recombination appears to remain the
    dominant current path and can explain why the temperature
    sensitivity parameter TO remains

     

     


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    برچسب ها : lasers ,
    Band-Structure Engineering in Strained Semiconductor Lasers

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