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Band-gap shrinkage calculations and analytic model for strained bulk InGaAsP

    In the former
    it leads to an increase in the lasing wavelength and in the latter an increase in the gain peak wavelength
    as the bias current is increased. This simple model, involves a material constant which is treated
    as a fitting parameter. However, because SOAs are often operated over a wide range of
    drive currents and input optical powers leading to large variations in carrier density along the amplifier
    length, for improved model accuracy it is preferable to use band-gap shrinkage calculated from
    knowledge of the material bandstructure.

    Abstract
    Band-gap shrinkage is an important effect in semiconductor lasers and optical amplifiers. The shrinkage dependency on temperature and both tensile and compressive strain is investigated
    and compared to the cube root model, for which it shows significant deviation. The most common model used for carrier-density dependent
    band-gap shrinkage is a cube root dependency on carrier density, which is strictly only true for high
    carrier densities and low temperatures. In this letter the carrier density dependent band-gap shrinkage
    for strained InGaAsP is calculated by using detailed non-parabolic conduction and valence band
    models. Asimple power
    model, showing an almost square-root dependency, is derived for carrier densities in the range usually
    encountered in InGaAsP laser diodes and SOAs. Strained InGaAsP material is commonly used to fabricate polarization
    insensitive semiconductor optical amplifiers (SOAs). Most mathematical models for SOAs use the
    cube root bandgap shrinkage model.


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    ارسال شده در تاریخ شنبه 30 مرداد 1395 [ گزارش پست ]
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