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Influence of Buried Structure on Polarization Sensitivity in Strained Bulk Semiconductor Optical Amp

    Abstract—In order to achieve an accurate design of polarization-
    insensitive semiconductor optical amplifiers based on tensilestrained
    bulk InGaAsP, the reduction of strain in the active layer
    of the buried heterostructure and its influence on polarization sensitivity
    are analyzed numerically for the first time. The gain calculation,
    including the strain distribution in the active layer, is examined
    based on the k p method for the different active layers. It
    is found that the strain introduced during the epitaxial growth is
    strongly reduced after regrowth of the burying layer. In an active
    layer having the aspect ratio of 1 : 4, the strain reduction causes
    more than a 0.5-dB deviation in the polarization sensitivity of the
    gain. From a comparison with the experimental results, it is shown
    that including the effect of the burying layer in the calculation gives
    an accurate determination of the amount of strain for the polarization
    independence.
    Index Terms—Gain, k p, polarization sensitivity, SOA, strain.


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    برچسب ها : strain ,polarization ,layer ,active ,polarization sensitivity ,burying layer ,
    Influence of Buried Structure on Polarization Sensitivity in Strained Bulk Semiconductor Optical Amp

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