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Influence of Buried Structure on Polarization Sensitivity in Strained Bulk Semiconductor Optical Amp

    It
    is found that the strain introduced during the epitaxial growth is
    strongly reduced after regrowth of the burying layer. The gain calculation,
    including the strain distribution in the active layer, is examined
    based on the k p method for the different active layers. In an active
    layer having the aspect ratio of 1 : 4, the strain reduction causes
    more than a 0.
    Index Terms—Gain, k p, polarization sensitivity, SOA, strain.

    Abstract—In order to achieve an accurate design of polarization-
    insensitive semiconductor optical amplifiers based on tensilestrained
    bulk InGaAsP, the reduction of strain in the active layer
    of the buried heterostructure and its influence on polarization sensitivity
    are analyzed numerically for the first time.5-dB deviation in the polarization sensitivity of the
    gain.

    . From a comparison with the experimental results, it is shown

    that including the effect of the burying layer in the calculation gives
    an accurate determination of the amount of strain for the polarization
    independence
    این مطلب تا کنون 84 بار بازدید شده است.
    ارسال شده در تاریخ شنبه 30 مرداد 1395 [ گزارش پست ]
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آمار امروز سه شنبه 3 بهمن 1396

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